EV/HEVs helps to Increase the Demand For the Market of IGBT and Super Junction MOSFET
In recent years, environment compatibility, energy efficiency, flexibility and cost reduction have emerged as critical global issues across the semiconductor industry. Over the years, the electronics industry has been launching various power semiconductor solutions, such as insulated gate bipolar transistors (IGBTs) and super junction MOSFETs (metal oxide field effect transistor). IGBTs and super junction MOSFETs are used in switching applications in different end-user applications, including uninterrupted power supplies (UPS), wind turbines, PV inverters, rail tractions, electric vehicles and hybrid electric vehicles, and other industrial applications.
IGBT offers faster switching and higher efficiency. As a power semiconductor device, it competes against other devices and technologies such as Gallium Nitride (GaN), MOSFETs, and Silicon Carbide (SiC). IGBTs offer the features of both bipolar transistor and MOSFETs offering both high-voltage and high input impedance. IGBTs are preferred for the applications which require high breakdown voltage and high input impedance, owing to their better conductivity modulation characteristics. IGBTs are cost effective as compared to traditional MOSFETs and are replacing traditional MOSFETs in various applications. IGBTs are preferred in motor drive applications where high current and voltage are required.
Super junction MOSFETs achieve significant improvement over conventional MOSFETs by employing the principle of super junction charge-balance. Super-junction MOSFETs are manufactured with a deep-trench process technique. The demand for super junction MOSFETs is high in applications that require significantly high power ratings.
Both IGBT and super junction MOSFETs come in discrete as well as module forms. Growth of the discrete market is driven by increasing demand for consumer electronic products while modules have found significant uptake in photovoltaic inverters, and electric and hybrid electric vehicles (EV/HEV. Globally, the combined market for IGBT (Insulated Gate Bipolar Transistor) and super junction MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) was valued at USD 4,776.2 million in 2012 and is likely to grow at a CAGR of 11.6%. Increasing demand for energy efficiency, environment compatibility, flexibility, and cost and size reduction are the emerging trends across the semiconductor industry and have greatly influenced the trends in power semiconductor market. IGBT and super junction MOSFETs offer significant improvement in efficiency and better switching frequency.
Rising use of IGBTs and super junction MOSFETs in electric and hybrid vehicles and the rising focus on greater energy efficiency are some of the factors propelling the global IGBT and super junction MOSFET market. The market holds excellent growth opportunities in the flourishing market for smart grids. However, the market is projected to be held back to a certain extent owing to the stiff competition from power semiconductors.
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Some of the most influential vendors in the market are ABB Ltd., Semikron Inc., Fairchild Semiconductor International Inc., Infineon Technologies AG, Mitsubishi Electric Corporation, Hitachi Power Semiconductor Device Ltd., Toshiba Corporation, STMicroelectronics N.V., Fuji Electric Co. Ltd., and Vishay Intertechnology Inc.